Al-Cu系合金Al2Cu与Al2Cu/α界面价电子结构分析Analysis of Valence Electron Structure of Al2Cu and Al2Cu/α Phase Interface in Al-Cu Alloy System
刘伟东,屈华,冯祥雨,崔庆辉,朱伟
摘要(Abstract):
强化相Al_2Cu(θ',θ和Ω)与Al_2Cu/α相界面的价电子结构对Al-Cu系合金强韧性有重要影响。本文基于固体与分子经验电子理论(EET),计算了α基体,θ',θ,Ω相和θ'/α,θ/α,Ω/α相界面的价电子结构,用最强键共价电子对数n_1,总成键能力F,原子状态组数σ_p,体共价电子密度ρ_c对比分析了θ',θ和Ω相的稳定性和沉淀硬化能力,用面共价电子密度ρ和共价电子密度差Δρ分析了θ'/α,θ/α,Ω/α相界面的结合力和连续性。结果表明:θ',θ和Ω相的最强键共价电子对数大小顺序为n_1~0>n_1~(0')>n_1~Ω,位错主滑移面{111}上的Ω相最强键合力比位于{001}面上的θ'和θ的分别小7.25%和13.47%,但对位错运动的阻碍作用更强;θ',θ和Ω相的总成键能力F,原子状态组数σ_p和体共价电子密度ρ_c大小顺序分别为F~Ω>F~θ>F~(θ'),σ_ρ~Ω>σ_p~(θ')>σ_ρ~θ和ρ_c~Ω>ρ_c~(θ')>ρ_c~θ,与θ'和θ相比,Ω相更稳定,强度和硬度更大,沉淀硬化能力更强;Ω/α相界面的ρ_α~((111))比θ'/α和θ/α的ρ_α~((001))大94.32%,ρ_Ω~((001))比θ'/α的ρ_(θ~r)~(001)和θ/α)p_θ~((001))分别大66.84%和512.22%,Ω/α相界面Δρ_(Ω/α)最小,与θ'/α和θ/α相比,Ω/α结合力更大,连续性更好;与相空间价电子结构相比,θ'/α,θ/α和Ω/α相界面θ',θ和Ω侧的原子状态和外层电子结构调整降低了ρ_(θ')~((001))和ρ_Ω~((001)),增加了ρ_θ~((001)),减小了与α侧ρ_α~((001))和ρ_α~((111))的差值,提高了相界面的连续性。
关键词(KeyWords): Al-Cu合金;Al_2Cu;相空间;相界面;价电子结构;经验电子理论
基金项目(Foundation): 辽宁省教育厅面上项目(LJKMZ20220958,LJK20621);; 辽宁省“兴辽英才计划”教学名师项目(XLYC221026)资助
作者(Author): 刘伟东,屈华,冯祥雨,崔庆辉,朱伟
DOI: 10.13373/j.cnki.cjrm.XY25080006
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